NEC Electronics Embeds Mosys' 1T-SRAM® Memory Technology In 90NM Custom ASIC

Companies Extend Agreement To Use 1T-SRAM In Upcoming Consumer Applications

SUNNYVALE, Calif. – March 24, 2005 – MoSys, Inc. [NASDAQ: MOSY], the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions announced today the renewal of the existing partnership with NEC Electronics to incorporate MoSys' 1T-SRAM technologies into high volume semiconductor devices for consumer applications manufactured on NEC Electronics' 90nm process generation.

"Since the commencement of our original licensing agreement in March 1999, NEC Electronics has successfully deployed MoSys' 1T-SRAM because of its unique combination of performance, density and power capabilities not available from any other competing memory technologies," said Tom Nukiyama, senior technical director at NEC Electronics America. "We now look to extend our relationship with MoSys to jointly offer our ASIC customers requiring large quantities of high-performance embedded memory a compelling solution to enhance their consumer electronics SoC designs. The manufacturability of 1T-SRAM memory makes it the ideal technology for reducing costs and increasing quality, which is why, at the end of the day, we see it as the ultimate drop-in memory solution."

"We are pleased that NEC Electronics will continue to use our 1T-SRAM embedded memory technologies on even more aggressive processes," said Karen Lamar, vice president of Sales and Marketing at MoSys, Inc. "This combination of our unique memory architecture and NEC Electronics' most advanced semiconductor fabrication technology provides SoC designers with tremendous capability for their next generation of highly-integrated products."

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 80 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at