SilTerra Launches 0.13 Micron High Voltage Technology

Kulim, Kedah – SilTerra Malaysia, a leading wafer foundry provider of high voltage technology, recently announced the availability of 0.13 micron high voltage technology (codename: CL130H32). This new technology is targeted at the display driver IC used in high resolution TFT LCD panel ( 2.5 inch panel size and above ) such as PDA Phones, Mobile TV Phones and Smart Phones.

The latest high voltage technology features the proven 2.13 micron square SRAM bitcell most optimized for high density embedded memory design for WQVGA (240RGBx432, Wide-Quarter VGA) ,HVGA (320RGBx480, Half VGA) and VGA ( 480RGBx 640) TFT panels. The new SRAM bit cell is a slim cell type which provides better yield performance and area optimization for display driver design as compared with rectangle SRAM cell type. In addition, the technology offers Asymmetry High Voltage Well for denser design, One-Time-Programmable cell for gamma colour tuning and voltage trimming, ESD protection and Metal capacitors design guideline.

"Silterra is a leading foundry focusing on small panel driver IC market. Our latest 0.13 micron high voltage technology is the forth generation platform targeting at the advanced display driver IC solutions for the fast expanding Smart Phones, PDA Phones, Mobile TV Phones and other high resolution multimedia handheld applications. This technology offers a true low standby current performance, tighter design rules with full aluminium backend interconnect. It also features full suite of design kits and libraries to help our customers win early designs with the time-to-market advantage." said Yit Loong Lai, Vice President of World Wide Sales and Marketing.

"Being a leader in high voltage technology, SilTerra is also on track to roll out next generation <1.9 micron square 6T SRAM bitcell in 1Q09. Our latest development of 0.13 micron high voltage 1T SRAM process is executing very well and is on track for 1H 2009 mass production." Lai added.

SOURCE: SilTerra Malaysia